Applications
Artificial Intelligence (AI)
SS-MRAM™ offers high speed, low power consumption, and high endurance, making it well-suited for memory systems in AI applications such as neural network accelerators, edge AI processors, and embedded inference devices. Its non-volatility and fast access capabilities help improve AI model execution efficiency while reducing energy consumption.
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High-Speed Access
AI inference and training involve intensive data access. SS-MRAM™ delivers DRAM-like speed, reducing latency in data exchange. -
High Endurance for Frequent Writes
Frequent parameter updates and temporary storage in AI models require durable memory. SS-MRAM™ offers near-DRAM/SRAM endurance levels, supporting long-term use. -
Low Power Operation
In power-constrained edge AI devices, SS-MRAM™’s low write energy helps extend battery life and reduce heat generation. -
Non-volatility for Instant-On AI
AI models can remain stored even without power, enabling fast system wake-up and real-time processing without reloading. -
High Integration with CMOS Compatibility
Fully compatible with existing CMOS processes, SS-MRAM™ can be easily integrated into current AI chip designs (e.g., MCUs, SoCs) without additional fabrication steps.
Data Center
Data centers demand memory solutions with high speed, endurance, and energy efficiency.
SS-MRAM™ offers high-speed, non-volatility, low power consumption, and high endurance, making it an ideal fit for data centers. It enables persistent data storage with faster access and lower energy use, supporting green computing initiatives and long-term system reliability in high-performance server environments.
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Low Power Reduces Energy and Cooling Costs
SS-MRAM™ consumes less energy during writes, helping reduce total power and thermal load across servers. -
Non-volatility Supports Persistent Caching and Instant Recovery
Retains critical data during shutdowns or reboots, ideal for backup, logging, and cache functions. -
High Endurance Handles Intense Server Workloads
With unlimited write cycles, SS-MRAM™ is well-suited for frequent data access in enterprise storage. -
Easy Integration into Existing Architectures
Fully compatible with standard memory interfaces, SS-MRAM™ can be adopted with minimal changes to infrastructure.
Edge Computing
Combining non-volatility, high speed, low power, and durability, SS-MRAM™ is an ideal memory solution for edge computing devices such as smart cameras, edge AI modules, and real-time sensors. Its characteristics support low-latency processing, quick response, and data retention during power loss—key requirements for efficient and reliable edge computing.
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Real-Time Data Processing
SS-MRAM™’s fast access enables instant processing of image, audio, or sensor data at the edge, reducing latency. -
Low Power for Long-Term Operation
Edge devices often run on limited power sources. SS-MRAM™’s energy efficiency helps extend operational lifetime. -
Strong Data Retention (Non-Volatility)
SS-MRAM™ preserves critical data during unexpected power loss, supporting system recovery and data integrity. -
High Endurance for Continuous Operation
Designed for heavy read/write workloads, SS-MRAM™ enhances reliability in edge environments. -
High Integration Across Diverse Platforms
Compatible with MCUs and SoCs, SS-MRAM™ adapts to a wide range of edge applications—from smart cities to AI-enabled manufacturing.
Internet of Things (IoT)
IoT devices are often constrained by power, memory size, and reliability requirements.
SS-MRAM™’s non-volatility, high endurance, and low power consumption make it an ideal memory choice for sensor nodes, smart home systems, and portable IoT devices. Its compatibility with CMOS processes allows easy integration into MCUs and low-power chips, enhancing system stability and overall performance.
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Non-volatility Enables Long-Term Offline Storage
IoT nodes often enter sleep mode for power saving. SS-MRAM™ retains data without power, ensuring information is preserved during downtime. -
Low Power Extends Device Lifespan
With extremely low write energy, SS-MRAM™ is well-suited for sensors and wearables, reducing energy consumption. -
High Endurance Supports Frequent Updates
IoT devices frequently collect and log data. SS-MRAM™ handles intensive write operations, increasing device lifespan and reliability. -
High Integration with MCUs and SoCs
SS-MRAM™ can be directly integrated into standard microcontrollers or SoCs without additional process steps, simplifying product development. -
Instant-On and Low Latency Response
For real-time IoT scenarios,such as smart cities and industrial monitoring, SS-MRAM™ enables quick system wake-up and rapid data handling.
High-Performance Computing (HPC)
High-performance computing systems demand exceptional memory speed, endurance, and power efficiency. SS-MRAM™ combines high speed, non-volatility, and high endurance, making it an ideal replacement for embedded DRAM (eDRAM). Especially in processor caches like Last-Level Cache (LLC), SS-MRAM™ can enhance computational performance, ensure data integrity, and reduce power consumption in intensive computing environments.
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eDRAM Replacement for Processor Cache
SS-MRAM™ offers DRAM-like speed and endurance, making it suitable for LLC, which comprises over 90% of on-chip cache. -
Supports High-Speed, Frequent Writes
Ideal for HPC workloads involving real-time processing and simulation, SS-MRAM™ sustains high-frequency write cycles without degradation. -
Non-volatility Enhances Data Integrity
Critical data is retained during power loss or crashes, ensuring reliability for data centers and HPC nodes. -
Reduces Energy Use and Cooling Costs
Lower write energy helps cut power usage and thermal output, improving the energy efficiency of large-scale systems. -
Process Compatibility for Advanced HPC Chips
SS-MRAM™ can be integrated into cutting-edge process nodes, enabling continued scaling of next-gen HPC chips.
Space
Space missions require memory solutions with exceptional reliability, endurance, and radiation tolerance. SS-MRAM™’s non-volatility, high durability, and energy efficiency make it suitable for satellites, deep-space probes, and aerospace instruments. Its stable superlattice barrier structure—built from non-singlecrystalline materials—offers physical robustness, enhancing system integrity and data retention during extended operations in extreme environments.
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Non-volatility Ensures Data Retention in Harsh Environments
SS-MRAM™ retains critical data across power cycles, essential for mission continuity and fault recovery in space. -
High Endurance for Long-Term Operations
With over a billion write cycles, SS-MRAM™ supports extended missions involving frequent data logging. -
Low Power for Energy-Constrained Systems
Space systems have limited energy budgets—SS-MRAM™’s low write power helps conserve energy and manage thermal load. -
Structural Stability Potentially Enhances Radiation Tolerance
The storage of data using magnetic moments in the ferromagnetic layer provides greater material stability, potentially improving resistance to radiation effects.
Automotive
SS-MRAM™ offers high endurance, non-volatility, low power, and fast access—key features for modern automotive electronics. It supports real-time processing, frequent data logging, and critical data retention in harsh environments. With stable operation under high temperatures and compatibility with standard automotive-grade IC processes, SS-MRAM™ is ideal for applications such as ECUs, ADAS, autonomous driving systems, and in-vehicle infotainment.
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High Endurance for Frequent Data Logging
Supports frequent read/write operations in sensors, ensuring long-term reliability. -
Non-volatility Enhances Data Safety
Critical data remain intact during power loss or crashes. -
Low Power Reduces Overall Energy Use
Essential for EVs and hybrid systems where power efficiency is critical across all subsystems. -
High Speed Enables Real-Time Response
Fast read/write access supports quick decision-making in autonomous and safety-critical systems.