SS - MRAM™ Technology
High Read / Write Performance
10X
Faster than DRAM
1000X
Faster than Flash
SS-MRAM™ achieves high read/write performance by incorporating an artificial superlattice as the tunneling barrier in its magnetic tunnel junction (MTJ). This superlattice materials, significantly improves quantum tunneling efficiency and spin polarization, thereby enhancing overall read/write performance. Unlike conventional single-crystalline MgO barriers, the superlattice design eliminates the need for strict epitaxial growth, enabling better scalability and yield.
The enhanced quantum tunneling effect supported by the superlattice allows spin-polarized electrons to transfer more efficiently, resulting in faster and more stable switching. As a result, SS-MRAM™ achieves read/write speeds faster than 10 ns, outperforming Flash and DRAM. Furthermore, write energy is significantly reduced due to improved spin-transfer torque (STT) switching efficiency, making the device suitable for energy-sensitive environments.
These advantages position SS-MRAM™ as an ideal memory solution for high-speed, high-frequency applications in AI, high-performance computing (HPC), and edge computing—where both speed and energy efficiency are critical.
High Endurance
SS-MRAM™ leverages a non-singlecrystalline superlattice barrier to overcome the degradation and dielectric breakdown issues seen in traditional MgO-based STT-MRAM. This design greatly enhances device endurance, enabling write cycle counts comparable to those of SRAM and DRAM. The stable superlattice materials supports long-term reliability, allowing SS-MRAM™ to reach unlimited endurance. Such endurance is far superior to that of Flash and typical MRAM, making SS-MRAM™ particularly suitable for high-write-frequency applications that demand consistent performance over extended periods.
Unlimited endurance.
Low Power Consumption
Significant reduction of energy consumption
SS-MRAM™ achieves low power consumption by enhancing quantum tunneling and spin-transfer torque efficiency through its superlattice barrier design. This innovation significantly reduces the current and energy required for write operations. It operates without the need for external magnetic fields or complex circuitry, making it ideal for energy-sensitive applications such as IoT devices, embedded systems, and edge computing. The enhanced quantum transport mechanism further boosts write efficiency, allowing the memory to maintain low power usage even during high-speed operation, resulting in highly energy-efficient performance.
Non-Volatility
SS-MRAM™ is a non-volatile memory, meaning it retains data even when power is removed. Unlike DRAM, which store data using electrical charge and require frequent refreshing to maintain data integrity, MRAM stores logic states using magnetic moments, eliminating the need for refresh operations. This enables long-term data retention without power, providing inherent stability and reliability. Non-volatility makes SS-MRAM™ ideal for energy-efficient systems, instant-on applications, and scenarios where data persistence is critical—such as IoT nodes, edge computing, and automotive electronics—while also helping reduce overall system power consumption.
Retains data even when power is removed
Anti-Electric Field Interference
Stronger resistance to electrical interference
SS-MRAM™ stores information using the magnetic moment of electron spins, rather than relying on electric charge or current as in conventional memories. This fundamental difference makes SS-MRAM™ inherently less susceptible to electric field interference, such as electrostatic discharge (ESD) or transient voltage surges. SS-MRAM™ is particularly well-suited for environments requiring high reliability and immunity to electrical disturbances, including automotive systems, aerospace electronics, and industrial applications.